Double-barrier structure of the resonant tunneling diode using Group IV materials (IMAGE)
Caption
The illustration (left) shows the different layers of the double-barrier structure; the two GeSiSn barriers are stacked between layers of GeSn. The table (right) indicates the layers where hydrogen gas was introduced in different scenarios.
Credit
Shigehisa Shibayama (Nagoya University)
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License
CC BY-NC-ND