New material approach could lead to lower-power devices
DOE/Oak Ridge National LaboratoryPeer-Reviewed Publication
Scientists at Oak Ridge National Laboratory showed they can “write” ferroelectric regions into aluminum nitride by using a helium ion beam to create precise defects while keeping the crystal intact. Ferroelectric materials can store information without needing continuous power, so this could lead to more reliable, lower-energy memory made with processes already used in chip manufacturing. The defect patterning reduced the amount of voltage needed to switch the material between its two stable internal states (like 0 and 1 in digital memory) by about 40% and boosted the electromechanical response, which also benefits radio-frequency filters and resonators — parts in wireless devices that tune and stabilize high-frequency signals.Scientists at Oak Ridge National Laboratory showed they can “write” ferroelectric regions into aluminum nitride by using a helium ion beam to create precise defects while keeping the crystal intact. Ferroelectric materials can store information without needing continuous power, so this could lead to more reliable, lower-energy memory made with processes already used in chip manufacturing. The defect patterning reduced the amount of voltage needed to switch the material between its two stable internal states (like 0 and 1 in digital memory) by about 40% and boosted the electromechanical response, which also benefits radio-frequency filters and resonators — parts in wireless devices that tune and stabilize high-frequency signals.
- Journal
- Advanced Materials
- Funder
- U.S. Department of Energy